Infineon IPD80R450P7: A High-Performance 80 mΩ Power MOSFET for Demanding Switching Applications
The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IPD80R450P7, a state-of-the-art power MOSFET engineered to excel in the most demanding switching applications. This device encapsulates a perfect blend of ultra-low on-state resistance and superior switching characteristics, making it an ideal choice for modern power conversion systems.
A defining feature of the IPD80R450P7 is its exceptionally low maximum on-state resistance (RDS(on)) of just 80 mΩ at a gate-source voltage of 10 V. This ultra-low RDS(on) is the cornerstone of its high-performance profile, as it directly minimizes conduction losses. When a MOSFET is in its on-state, the primary source of power loss is the I²R dissipation across its drain-source channel. By drastically reducing this resistance, the IPD80R450P7 ensures that more energy is delivered to the load and less is wasted as heat. This is particularly critical in high-current applications such as server and telecom power supplies, where efficiency benchmarks are stringent.
Beyond its static performance, the device is optimized for dynamic operation. It is built on Infineon's advanced OptiMOS 7 technology platform, which is renowned for its excellent figure-of-merit (FOM). This technology achieves an optimal balance between low gate charge (Qg) and low RDS(on). A lower gate charge means the MOSFET can be turned on and off faster with less driving energy, significantly reducing switching losses. This is paramount in high-frequency switch-mode power supplies (SMPS), where switching losses can often surpass conduction losses. The superior switching performance of the IPD80R450P7 allows designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby increasing overall power density.
The robustness of the IPD80R450P7 is another key attribute. It offers a high maximum drain current (ID) of 80 A and is housed in a TOLL (TO-leadless) package. This package features an exposed top side for excellent thermal management, allowing heat to be efficiently dissipated away from the silicon die through a heatsink. This mechanical design is crucial for maintaining device reliability under continuous high-stress operation. Furthermore, the package's low-profile and leadless design minimizes parasitic inductance, which contributes to cleaner switching and reduces voltage overshoot, enhancing system stability.
Typical applications where this MOSFET shines include:
High-efficiency DC-DC converters in computing and data centers.
Power factor correction (PFC) stages in server and telecom SMPS.
Motor drive and control circuits in industrial automation.
Solar inverters and energy storage systems.
ICGOODFIND: The Infineon IPD80R450P7 stands as a premier solution for engineers tackling the challenges of modern power design. Its industry-leading combination of ultra-low 80 mΩ RDS(on) and exceptional switching speed empowers the creation of systems that are not only more efficient but also more compact and reliable. It is a testament to how advanced semiconductor technology can directly enable progress in energy efficiency and power density.
Keywords: OptiMOS 7 Technology, Ultra-Low RDS(on), High-Frequency Switching, High Power Density, TOLL Package.
