Infineon BSC027N10NS5: A High-Performance OptiMOS™ 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's BSC027N10NS5, a benchmark N-channel power MOSFET that exemplifies the superior performance of the OptiMOS™ 5 100 V technology platform. This device is engineered to meet the demanding requirements of a wide array of power conversion applications, from server and telecom supplies to industrial motor drives and high-performance computing.

A key differentiator of the BSC027N10NS5 is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 2.7 mΩ at 10 V VGS, it minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. This is complemented by an optimized gate charge, which ensures swift switching transitions. The combination of these characteristics is crucial for achieving peak efficiency in both hard- and soft-switching topologies, such as synchronous rectification in switch-mode power supplies (SMPS) and active bridges in DC-DC converters.

Beyond raw performance metrics, the OptiMOS™ 5 technology provides enhanced robustness and reliability. The BSC027N10NS5 offers a high body diode robustness (dv/dt capability) and is qualified for avalanche and commutation mode operations, making it exceptionally resilient against voltage spikes and reverse recovery events commonly encountered in real-world circuits. This intrinsic ruggedness translates into greater design margin and long-term system reliability.

Furthermore, the device is housed in an SuperSO8 (PG-TDSON-8) package, which offers a compact footprint while providing superior thermal and electrical performance compared to standard SO-8 packages. The improved package design, with its exposed cooling pad, enhances heat dissipation, enabling higher power throughput in space-constrained applications.

ICGOOODFIND: The Infineon BSC027N10NS5 stands as a premier choice for designers aiming to push the boundaries of efficiency and power density. Its optimal blend of ultra-low R DS(on), fast switching capability, and proven ruggedness within a thermally efficient package makes it an indispensable component for the next generation of high-efficiency power conversion systems.

Keywords: OptiMOS™ 5, Low R DS(on), High Efficiency, Power Conversion, SuperSO8 Package.