Intel TE28F320B3BD70 3V 32Mbit Flash Memory Chip: Datasheet, Pinout, and Application Notes
The Intel TE28F320B3BD70 is a prominent 32-megabit (4MB) 3.0-volt single-power-supply flash memory chip, renowned for its reliability and performance in a wide range of embedded systems. Organized as 4,194,304 words by 8 bits, it represents a key solution for non-volatile storage needs in applications requiring robust data retention and efficient reprogramming.
Datasheet Overview
The datasheet for the TE28F320B3BD70 details its core architecture and operational characteristics. It is built on Intel's advanced StrataFlash® Memory Technology, which enables a cost-effective single-transistor cell design. Key electrical characteristics include:
Voltage Supply: 3.0V to 3.6V for read, write, and erase operations.
Access Time: As fast as 70ns (for the BD70 speed grade).
Program and Erase Algorithms: Features an embedded erase algorithm (EEA) and an embedded program algorithm (EPA), automating these complex processes and significantly reducing the burden on the system's microprocessor.
High Performance: Offers a 16-byte write buffer, allowing for faster programming of sequential data compared to traditional word-by-word programming.
Durability: Guaranteed for a minimum of 100,000 write/erase cycles per sector and offers data retention of up to 20 years.
Pinout Configuration
The device is offered in industry-standard packages, such as the 48-pin TSOP (Thin Small Outline Package). The pinout includes critical signals for control, addressing, and data I/O:
Control Pins: Key control pins include Chip Enable (CE), Write Enable (WE), and Output Enable (OE), which manage the basic read and write cycles.
Address and Data Pins: Address inputs (A0-A21) select memory locations, while the Data I/O pins (DQ0-DQ7) form an 8-bit bus for bidirectional data transfer.
Power Management: VCC (3.3V power supply) and VPP (a pin that can be leveraged for accelerated programming but is not required for standard operation, often connected to VCC).
Status Monitoring: The RY/BY (Ready/Busy) pin provides a hardware method for detecting the completion of a program or erase operation.
Application Notes
The TE28F320B3BD70 is designed for code and data storage in sophisticated digital systems. Its primary applications include:
Telecommunication Equipment: Storing firmware and configuration data in routers, switches, and base stations.
Automotive Electronics: Used in engine control units (ECUs), infotainment systems, and instrument clusters where reliability is paramount.
Industrial Control Systems: Serving as firmware storage for programmable logic controllers (PLCs) and other factory automation hardware.
Consumer Electronics: Found in set-top boxes, printers, and networking devices.
When designing this chip into a system, several factors are crucial:
1. Power-On Sequencing: Proper power-up and power-down timing must be observed to prevent accidental writes.
2. Noise Immunity: Decoupling capacitors should be placed close to the VCC pin to ensure a stable power supply and clean signal integrity.
3. Algorithm Execution: The microcontroller must correctly issue the required command sequences to initiate the internal program and erase algorithms.
4. Software Drivers: Developing robust low-level drivers is essential for interacting with the chip's command set and status register to manage read, program, and erase operations effectively.
ICGOOODFIND
The Intel TE28F320B3BD70 stands as a robust and versatile non-volatile memory solution for 3.3V embedded systems. Its integration of intelligent write and erase algorithms, combined with high endurance and industry-standard packaging, made it a preferred choice for developers requiring dependable firmware storage. Understanding its datasheet specifications, pinout configuration, and key application considerations is fundamental for successful implementation in complex electronic products.
Keywords: Flash Memory, 3.3V, Datasheet, Pinout, Embedded Systems
