Infineon IPD60R380C6 CoolMOS™ Power Transistor: Performance and Application Insights
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is Infineon's IPD60R380C6, a member of the renowned CoolMOS™ C6 family. This high-voltage superjunction MOSFET is engineered to deliver exceptional performance in a wide array of demanding applications, setting a new benchmark for what designers can expect from a power transistor.
A key performance metric for any power MOSFET is its on-state resistance (RDS(on)), and the IPD60R380C6 excels with a maximum of just 0.38 Ω at 25°C. This remarkably low value is achieved at a drain-source voltage (VDS) rating of 650 V, making it an ideal candidate for high-voltage circuits. The low RDS(on) translates directly into reduced conduction losses, which is paramount for achieving high overall system efficiency. This efficiency gain not only saves energy but also simplifies thermal management, as less power is dissipated as heat.
Beyond its static performance, the device showcases excellent switching characteristics. The inherent advantages of the superjunction (SJ) technology, upon which the CoolMOS™ platform is built, result in significantly lower gate charge (Qg) and output capacitance (Coss) compared to traditional planar MOSFETs. This leads to faster switching speeds and markedly lower switching losses, especially in hard-switching topologies common in power supplies. The low gate charge also means the device is easier to drive, reducing the stress on the gate driver circuitry and contributing to a more reliable and cost-effective design.

The combination of low conduction and switching losses makes the IPD60R380C6 exceptionally versatile. Its primary application domain is in switched-mode power supplies (SMPS), particularly in stages like the Power Factor Correction (PFC) boost converter, where its high voltage rating and efficient switching are crucial for maintaining a sinusoidal input current and high power factor. Furthermore, it is an excellent choice for the main switch in flyback, forward, or half-bridge converters, enabling compact and efficient AC-DC power adapters, server PSUs, and industrial power systems.
Another significant application is in lighting, specifically in high-brightness LED driver circuits. The need for efficient, dimmable, and reliable drivers for commercial and industrial LED lighting is perfectly met by the performance profile of this MOSFET. Its robustness also finds uses in various industrial and motor control applications, including inverters and power tools, where durability and efficiency are non-negotiable.
In conclusion, the Infineon IPD60R380C6 CoolMOS™ transistor stands out as a superior component for modern power conversion tasks. By masterfully balancing a very low on-resistance with exceptional switching performance, it empowers designers to push the boundaries of efficiency and power density.
ICGOODFIND: The Infineon IPD60R380C6 is a high-performance 650V CoolMOS™ that sets a high standard with its extremely low 0.38 Ω RDS(on) and fast switching capabilities, making it a top-tier choice for high-efficiency SMPS, PFC circuits, and industrial power designs.
Keywords: CoolMOS™, Low RDS(on), High Efficiency, Power Factor Correction (PFC), Fast Switching
