Infineon IPD75N04S4-06: High-Performance 75V Single N-Channel Power MOSFET
In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPD75N04S4-06 stands out as a premier solution, engineered to meet the rigorous demands of modern automotive and industrial applications. This 75V single N-channel power MOSFET is a testament to Infineon's leadership in semiconductor technology, offering an exceptional blend of low on-state resistance and high switching performance.
A key highlight of this MOSFET is its extremely low typical on-state resistance (RDS(on)) of just 0.75 mΩ. This remarkably low value is crucial for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Whether deployed in DC-DC converters, motor control systems, or high-current switching modules, this device ensures that energy is utilized effectively, conserving power and enhancing the overall performance of the end application.
The IPD75N04S4-06 is built using Infineon's advanced OptiMOS™ 6 technology platform. This cutting-edge process technology is the foundation for its superior electrical characteristics, providing an optimal balance between switching speed and losses. The result is a component that excels in high-frequency switching operations, enabling designers to create more compact and power-dense solutions without compromising on thermal management or reliability.
Furthermore, this MOSFET is AEC-Q101 qualified, underscoring its robustness and suitability for the harsh environments encountered in automotive electronics. It is an ideal choice for applications such as electric power steering (EPS), braking systems, and transmission control units, where failure is not an option. The device also features a low gate charge (Qg), which simplifies drive circuit design and allows for faster switching transitions, further improving efficiency.
Packaged in the space-efficient SuperSO8 (SSO-8), the IPD75N04S4-06 offers excellent thermal conductivity and power dissipation capabilities. This package is designed to maximize board space utilization while ensuring reliable operation under continuous high-stress conditions.
ICGOOFind: The Infineon IPD75N04S4-06 is a top-tier power MOSFET that delivers exceptional efficiency, robust performance, and high reliability. Its ultra-low RDS(on) and advanced OptiMOS™ 6 technology make it an indispensable component for engineers designing next-generation automotive and industrial power systems.
Keywords: OptiMOS™ 6, Low RDS(on), AEC-Q101, High-Frequency Switching, Power Efficiency.
